Multiple exposure technique to pattern tight contact geometries

Details Multiple exposure technique to pattern tight contact geometries Multiple exposure technique to pattern tight contact geometries

2005-11-22

2005-11-22

Siek, Vuthe (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000

Reexamination Certificate

active

06968532

ABSTRACT:
A mask pattern may be decomposed into two or more masks, each having a pitch greater than that of the original mask pattern. New, “partial-pattern” masks may be created for each of the new mask patterns. The original mask pattern is transferred to the photoresist for the corresponding layer using a multiple exposure technique in which the photoresist is exposed with each of the partial-pattern masks individually, e.g., back-to-back in a pass through a scanner, to define all of the features in the original pattern.

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