Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-19
2006-12-19
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S622000, C257S750000, C257S758000, C257SE21122
Reexamination Certificate
active
07151052
ABSTRACT:
Described are methods and structures for mitigating the effects of mechanical stresses placed on the layers of semiconductor devices, and specifically disclosed are methods and structures for mitigating the diminished chemical bonds between etch-stop layers and other semiconductor device layers. The disclosed methods and structures use different structures and/or processes for some of the etch-stop layers in a device.
REFERENCES:
patent: 2001/0045651 (2001-11-01), Saito et al.
patent: 2004/0121085 (2004-06-01), Wang et al.
patent: 2004/0238962 (2004-12-01), Jung et al.
Chi Kuan-Shou
Hsia Chin-Chiu
Huang Tai-Chun
Liang Mong-Song
Yao Chih-Hsiang
Baker & McKenzie LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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