Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-06-03
2000-03-07
Phan, Trong
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438228, 438936, H01L 218238
Patent
active
060339454
ABSTRACT:
According to one embodiment, a memory device comprises a bit line operable to access a memory cell. The bit line has a first end and a second end. A first equilibration circuit is coupled to the first end of the bit line, and a second equilibration circuit is coupled to the second end of the bit line. The first and second equilibration circuits cooperate to pre-charge the bit line. According to another embodiment, an embedded-process memory device comprises a p-well and a deep n-well formed into a substrate. A retrograde well is formed into the deep n-well. An equilibration circuit for pre-charging a bit line is formed into the retrograde well.
REFERENCES:
patent: 4578128 (1986-03-01), Mundt et al.
patent: 5843813 (1998-12-01), Wei et al.
patent: 5950079 (1999-09-01), Honeycutt et al.
G-Link Technology
Phan Trong
Woo Philip W.
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