Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-22
2011-03-22
Le, Thao (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE33016
Reexamination Certificate
active
07910425
ABSTRACT:
A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
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Related case, U.S. Appl. No. 12/243,137, filed Oct. 1, 2008 to Daniel Charles Kerr, et al.; “Multiple Doping Level Bipolar Junction Transistors And Method For Forming”; currently allowed.
Carroll Michael Scott
Hamad Amal Ma
Kerr Daniel Charles
Key Roger W.
Lai Thiet The
Agere Systems Inc.
Le Thao
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