Multiple device types including an inverted-T channel...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S381000, C438S268000, C257SE27098

Reexamination Certificate

active

07452768

ABSTRACT:
A method for making a semiconductor device is provided. The method includes forming a first transistor with a vertical active region and a horizontal active region extending on both sides of the vertical active region. The method further includes forming a second transistor with a vertical active region. The method further includes forming a third transistor with a vertical active region and a horizontal active region extending on only one side of the vertical active region.

REFERENCES:
patent: 5654218 (1997-08-01), Lee
patent: 6177706 (2001-01-01), Shindo et al.
patent: 6252284 (2001-06-01), Muller et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6630712 (2003-10-01), Yu
patent: 6864519 (2005-03-01), Yeo et al.
patent: 2002/0036347 (2002-03-01), Houston
patent: 2004/0150071 (2004-08-01), Kondo et al.
patent: 2004/0222477 (2004-11-01), Aller et al.
patent: 2004/0235300 (2004-11-01), Mathew et al.
patent: 2005/0023633 (2005-02-01), Yeo et al.
patent: 2005/0127362 (2005-06-01), Zhang et al.
patent: 2007/0085134 (2007-04-01), Anderson et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multiple device types including an inverted-T channel... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple device types including an inverted-T channel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple device types including an inverted-T channel... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4024148

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.