Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-25
2008-11-18
Tsai, H. Jey (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S381000, C438S268000, C257SE27098
Reexamination Certificate
active
07452768
ABSTRACT:
A method for making a semiconductor device is provided. The method includes forming a first transistor with a vertical active region and a horizontal active region extending on both sides of the vertical active region. The method further includes forming a second transistor with a vertical active region. The method further includes forming a third transistor with a vertical active region and a horizontal active region extending on only one side of the vertical active region.
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Burnett James D.
Mathew Leo
Min Byoung W.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Singh Ranjeev K.
Tsai H. Jey
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