Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-12
2005-07-12
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C438S240000, C438S647000, C438S685000
Reexamination Certificate
active
06916704
ABSTRACT:
An upper capacitor electrode of a trench capacitor of a DRAM memory cell is formed at least in part as a result of a plurality of metal-containing layers being deposited one on top of another and in each case being conditioned after they have been deposited. In this way, the internal stress of the electrode layer can be reduced, and therefore a breaking strength and a resistance to leakage currents of the trench capacitor can be increased.
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Yamada, K. et al.: “A Deep-Trenched Capacitor Technology For 4 Mega Bit Dynamic Ram”, IEEE, 1985, 29.3, pp. 702-705.
Ishiuchi, H. et al.: “Submicron CMOS Technologies For Four Mega Bit Dynamic Ram”, IEEE, 1985, 29.4, pp. 706-709.
Gutsche Martin
Sänger Annette
Seidl Harald
Sell Bernhard
Infineon - Technologies AG
Lebentritt Michael S.
Pompey Ron
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