Multiple bit magnetic memory cell

Details Multiple bit magnetic memory cell Multiple bit magnetic memory cell

1998-06-03

2000-06-27

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365173, G11C 1114

Patent

active

060814462

ABSTRACT:
A multiple bit magnetic memory cell includes a data storage layer having a shape which is preselected to provide at least three domain states wherein each domain state corresponds to a particular logic state and a particular orientation of magnetization in the data storage layer. The multiple bit magnetic memory cell includes a reference layer having a fixed orientation of magnetization which is defined by an angle of orientation wherein the angle of orientation is preselected to distinguish the domain states of the data storage layer.

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European Search Report, Application No. EP 99 30 4212, dated Jul 20, 1999.
Zhigang Wang, et al. "Quarternary Giant Magnetoresistance Random Access Memory", Apr. 15, 1996, pp. 6639-6641.

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