Multilevel nonvolatile memory device using variable resistance

Details Multilevel nonvolatile memory device using variable resistance Multilevel nonvolatile memory device using variable resistance

2009-04-15

2011-10-18

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S158000, C365S189090, C365S189150

Reexamination Certificate

active

08040714

ABSTRACT:
A multilevel nonvolatile memory device using a resistance material is provided. The multilevel nonvolatile memory device includes at least one multilevel memory cell and a read circuit. The at least one multilevel memory cell has a level of resistance that varies according to data stored therein. The read circuit first reads first bit data from the multilevel memory cell by providing a first read bias to the multilevel memory cell and secondarily reads second bit data from the multilevel memory cell by providing a second read bias to the multilevel memory cell. The second read bias varies according to a result of the first reading.

REFERENCES:
patent: 6552927 (2003-04-01), Naji
patent: 6611455 (2003-08-01), Sekiguchi et al.
patent: 7848138 (2010-12-01), Bedeschi et al.
patent: 2007/0201267 (2007-08-01), Happ et al.
patent: 2008/0232171 (2008-09-01), Bedeschi et al.

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