Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2006-03-31
2010-10-05
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S225700, C365S100000, C365S096000
Reexamination Certificate
active
07808810
ABSTRACT:
A nonvolatile memory cell includes a layer of a resistivity-switching metal oxide or nitride compound, the metal oxide or nitride compound including one metal, and a dielectric rupture antifuse formed in series. The dielectric rupture antifuse may be either in its initial, non-conductive state or a ruptured, conductive state. The resistivity-switching metal oxide or nitride layer can be in a higher- or lower-resistivity state. By using both the state of the resistivity-switching layer and the antifuse to store data, more than two bits can be stored per memory cell.
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Dugan & Dugan PC
Hur J. H.
Sandisk 3D LLC
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