Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-03-08
2000-05-30
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438618, 438622, 438627, 438688, H01L 214763
Patent
active
060690704
ABSTRACT:
A process for forming an electronic component carrier, the electronic carrier having routing layers parallel to an aluminum substrate and vias perpendicular to the aluminum substrate, the process comprising defining routing layers by forming a blocking mask on the aluminum substrate, the blocking mask leaving exposed areas corresponding to the routing layers, carrying out a barrier anodization process on the aluminum substrate to form a surface barrier oxide over the routing layers, removing the blocking mask, providing an upper aluminum layer over the aluminum substrate, defining vias by forming a blocking mask on the upper aluminum layer, the blocking mask covering areas corresponding to the vias, and subjecting both the aluminum substrate and the upper aluminum layer to porous anodization. The barrier oxide defining the routing layer provides reliable masking of the routing layer during porous anodization. A semiconductor device is attached to the electronic component carrier and is then connected to other electronic components through the electronic component carrier that is produced according to the disclosed method.
Labunov Vladimir A.
Lerner Steve
Sokol Vitaly A.
Custom Silicon Configuration Services
East/West Technology Partners, Ltd.
Niebling John F.
Zarneke David A
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