Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-13
2006-06-13
Everhart, Caridad M. (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S121000, C438S125000, C257S701000, C257S702000
Reexamination Certificate
active
07060604
ABSTRACT:
A method of producing a multilayer wiring substrate is disclosed. The multilayer wiring substrate is free from a core substrate and includes a build up layer which includes an insulator layer and a wiring layer. One of a first main surface and a second main surface of the build up layer is formed with a metal supporting frame body. The method includes the steps of: forming a first insulator layer on a first main surface of a metal supporting plate, where the first insulator layer is included in the insulator layer and becomes a first resist layer which is positioned on the first main surface's side of the build up layer, and forming a first metal pad layer in a given position on a first main surface of the first insulator layer, where the first metal pad layer is included in the wiring layer and becomes a metal pad layer.
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Baba Kazuhiro
Hirano Satoshi
Honda Hirokazu
Kambe Rokuro
Kata Keiichiro
Everhart Caridad M.
NEC Electronics Corporation
NGK Spark Plug Co. Ltd.
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