Multilayer resists with improved sensitivity and reduced proximi

Details Multilayer resists with improved sensitivity and reduced proximi Multilayer resists with improved sensitivity and reduced proximi

1985-04-26

1986-09-16

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430312, 430502, 430523, 430524, 430525, 430942, G03C 178

Patent

active

046122753

ABSTRACT:
The present invention discloses multi-layered resist structures and methods of producing them which can be used in electronic device lithography to produce micrometer and submicrometer geometries.
The resist structure comprises two or more layers at least one of which is a metallic material and at least one of which is a radiation-sensitive material. The metallic layer exhibits both a high atomic number and a high density. The metallic material is positioned relative to the radiation-sensitive polymeric material so that it can be used to control reflection and backscatter of radiation used to create a latent image within the radiation-sensitive polymeric material. The thickness of the metallic layer is determined by the amount of reflection desired and the amount of backscatter permitted into the layer of radiation-sensitive polymeric material.

REFERENCES:
patent: 4165395 (1979-08-01), Chang
patent: 4362598 (1982-12-01), Griffing
patent: 4419438 (1983-12-01), Etoh et al.
patent: 4456677 (1984-06-01), Chin
patent: 4524126 (1985-06-01), Marinace et al.
Mihir Parikh et al., "Energy Deposition Functions in Electron Resist Films on Substrates", Journal of Applied Physics 50(2), Feb. 1979, pp. 1104-1111.
J. S. Greeneich, "Proximity Effects in Electron-Beam Exposure of Multi-Layer Resists", Proceedings Symposium, Electron and Ion Beam Science and Technology, 9th International Conference 282, Electrochemical Society (1980).

Affiliated with

Also associated with

Rating

Multilayer resists with improved sensitivity and reduced proximi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilayer resists with improved sensitivity and reduced proximi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer resists with improved sensitivity and reduced proximi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1995448