Multilayer metallization

Details Multilayer metallization Multilayer metallization

2006-03-28

2006-03-28

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S638000, C438S639000, C438S668000

Reexamination Certificate

active

07018917

ABSTRACT:
Multiple metallization layers in a partially fabricated integrated circuit are formed in a single process step. As a place-holder for the later-deposited metallization layers, sacrificial material is deposited in the integrated circuit at desired locations at various fabrication levels over a substrate. The sacrificial material is then removed to form a contiguous open volume spanning multiple fabrication levels. A conductor is then deposited in the open volume to form multiple metallization layers in a single step.

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