Multilayer diffusion barriers

Details Multilayer diffusion barriers Multilayer diffusion barriers

1997-11-20

1999-08-24

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 257762, 257753, H01L 2348, H01L 2352, H01L 2940

Patent

active

059427990

ABSTRACT:
Multilayer diffusion barriers are used in integrated circuits. These diffusion barriers provide high electrical conductivity to carry current efficiently with fast response time, and additionally suppress diffusion between interconnect conductors, e.g. Cu, and the semiconductor device. Moreover, the present multilayer diffusion barriers adhere well to the underlying materials as well as to Cu.
In a preferred embodiment, the diffusion barriers comprise bilayers, each containing a first sublayer formed of a refractory metal, or a refractory metal nitride; and a second sublayer formed of a refractory metal nitride, a refractory metal silicon nitride, a refractory metal silicon boride, or a refractory metal oxonitride.
Multilayer diffusion barriers are deposited easily by CVD in a multistation module. The present structures can be applied to sub-0.25 .mu.m logic, memory and application specific circuits with Cu as the primary conductor.

REFERENCES:
patent: 5416359 (1995-05-01), Oda
patent: 5641992 (1997-06-01), Lee et al.
K. K. Shih et al., "Ti/Ti-N Hf/Hf-N and W/W-N multilayer films with high mechanical hardness," Appl. Phys. Lett. 61(6), Aug. 10, 1992, pp. 654-656.
Chang Woo Lee et al., "Stress relaxation in plasma deposited tungsten nitride//tungsten bilayer," Appl. Phys. Lett. 65(8), Aug. 22, 1994, pp. 965-967.
Hideaki Ono et al., "Diffusion Barrier Effects Against Cu of W-N Layer Formed by Electron Cyclotron Resonance Plasma Nitridation on W Layer," Jpn. J. Appl. Phys., vol. 34., (1995, pp. 1827-1830.
J. P. Lu et al., "A New Method for Processing TiN-based Barrier Films through Thermal Decomposition of TDMAT Combined with Post-deposition Silane Anneal," Advanced Metallization and Interconnect Systems for ULSI Applications; Oct. 1996, Boston; Proceedings, pp. 45-48.

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