Multibit ROM cell and method therefor

Details Multibit ROM cell and method therefor Multibit ROM cell and method therefor

2007-02-20

2007-02-20

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S290000, C257S390000

Reexamination Certificate

active

10640723

ABSTRACT:
To increase the density of memory cells, a multibit memory cell (10, 50, 80, 110) can be manufactured by preventing the formation of at least one of the extension regions usually formed for the source or drain region. In one embodiment, a single mask (24) blocks the doping of the extension regions during ion implantation. If a tilt implantation process is used to form desired extension regions, two masks may be used. The process can also be integrated into a disposable spacer process. By blocking the extension region for a current electrode, a programmable region (32, 76, 102, 132) is formed adjacent a current electrode. The programmable region enables a two-bit memory cell to be formed.

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