Multibit electro-mechanical memory device having at least...

Details Multibit electro-mechanical memory device having at least... Multibit electro-mechanical memory device having at least...

2011-01-11

2011-01-11

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S314000, C438S052000, C365S164000

Reexamination Certificate

active

07868401

ABSTRACT:
Provided are a multibit electro-mechanical memory device and a method of manufacturing the same. The device may include at least one bit line in a first direction on a substrate; at least one gate line and at least one lower word line in parallel by a given interval and in a second direction intersecting the first direction on the at least one bit line; at least one contact pad adjacent to the at least one gate line on the at least one bit line; and at least one cantilever electrode coupled to the at least one contact pad, configured to float with a void above and beneath the at least one cantilever electrode and configured to curve in a third direction vertical to the first and second directions.

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patent: 10-0308057 (2001-10-01), None

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