Static information storage and retrieval – Systems using particular element – Electrical contacts
Reexamination Certificate
2008-05-23
2010-10-26
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Systems using particular element
Electrical contacts
C365S185030, C365S185130
Reexamination Certificate
active
07821821
ABSTRACT:
A multibit electro-mechanical memory device and a method of manufacturing the same include a substrate, a bit line in a first direction on the substrate, a lower word line in a second direction intersecting the first direction, a pad electrode isolated from a sidewall of the lower word line and connected to the bit line, a cantilever electrode expending in the first direction over the lower word line with a lower void therebetween, and connected to the pad electrode and curved in a third direction vertical to the first and second direction by an electrical field induced by a charge applied to the lower word line, a trap site expending in the second direction over the cantilever electrode with an upper void therebetween, and an upper word line to which a charge to curve the cantilever electrode in a direction of the trap site is applied, and on the trap site.
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Decision of Grant, issued Sep. 23, 2008, in related Korean Application No. 10-2007-0050226.
Decision of Grant issued on Sep. 29, 2008 in related Korean Application No. 10-2007-0050223.
Choi In-Hyuk
Kim Min-Sang
Lee Ji-Myoung
Lee Sung-Young
Yun Eun-Jung
Luu Pho M
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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