Multi-zone RF inductively coupled source configuration

Details Multi-zone RF inductively coupled source configuration Multi-zone RF inductively coupled source configuration

1997-05-29

2000-07-04

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118823I, H05H 100

Patent

active

060833440

ABSTRACT:
The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

REFERENCES:
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5767628 (1998-06-01), Keller et al.
patent: 5792272 (1998-08-01), Van Os et al.
patent: 5820723 (1998-10-01), Benjamin et al.

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