Multi-transistor non-volatile memory element

Details Multi-transistor non-volatile memory element Multi-transistor non-volatile memory element

2011-08-30

2011-08-30

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000, C257SE29300, C257SE29308

Reexamination Certificate

active

08008702

ABSTRACT:
A multi-transistor element including a substrate, a first floating gate disposed on the substrate, a second floating gate disposed on the substrate and coupled to the first floating gate, and a first active region disposed in the substrate and coupled to the first and second floating gates.

REFERENCES:
patent: 4725983 (1988-02-01), Terada
patent: 5889303 (1999-03-01), Eckert et al.
patent: 7072215 (2006-07-01), Chih
patent: 7209392 (2007-04-01), Chen et al.
patent: 2005/0185464 (2005-08-01), Chih
patent: 2007/0257299 (2007-11-01), Chen et al.

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