Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-09-26
2008-09-09
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S734000, C257SE21176, C257SE21229
Reexamination Certificate
active
07422969
ABSTRACT:
The present invention provides a method for patterning a metal gate electrode and a method for manufacturing an integrated circuit including the same. The method for patterning the metal gate electrode, among other steps, includes forming a metal gate electrode layer (220) over a gate dielectric layer (210) located on a substrate (110), and patterning the gate electrode layer (220) using a combination of a dry etch process (410) and a wet etch process (510).
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Hurd Trace Q.
Riley Deborah J.
Rotondaro Antonio L. P.
Brady III W. James
Garner Jacqueline J.
Geyer Scott B.
Isaac Stanetta D
Telecky , Jr. Frederick J.
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