Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-11-01
2005-11-01
Young, Christopher G. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S311000, C430S313000, C430S316000, C430S318000, C430S319000, C430S323000, C216S067000
Reexamination Certificate
active
06960413
ABSTRACT:
Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.
REFERENCES:
patent: 4350563 (1982-09-01), Takada et al.
patent: 4406733 (1983-09-01), Tachi et al.
patent: 4504574 (1985-03-01), Meyer et al.
patent: 4600686 (1986-07-01), Meyer et al.
patent: 5538816 (1996-07-01), Hashimoto et al.
patent: 5750290 (1998-05-01), Yasuzato et al.
patent: 5773199 (1998-06-01), Linliu et al.
patent: 5861233 (1999-01-01), Sekine et al.
patent: 5948570 (1999-09-01), Kornblit et al.
patent: 5994235 (1999-11-01), O'Donnell
patent: 6007732 (1999-12-01), Hashimoto et al.
patent: 6033979 (2000-03-01), Endo
patent: 6037265 (2000-03-01), Mui et al.
patent: 6080529 (2000-06-01), Ye et al.
patent: 6114250 (2000-09-01), Ellingboe et al.
patent: 6214637 (2001-04-01), Kim et al.
patent: 6251217 (2001-06-01), Ye et al.
patent: 6391791 (2002-05-01), Sasaki et al.
patent: 6472107 (2002-10-01), Chan
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6709901 (2004-03-01), Yamazaki et al.
patent: 2003/0003374 (2003-01-01), Buie et al.
patent: 2003/0049934 (2003-03-01), Buie et al.
patent: 2004/0000535 (2004-01-01), Mueller et al.
patent: 27 01 458 (1977-01-01), None
patent: 0 054 736 (1982-06-01), None
patent: 0 978 870 (2000-02-01), None
patent: 0 999 472 (2000-05-01), None
patent: 60 016422 (1985-01-01), None
patent: 60 219748 (1985-11-01), None
patent: 62 181433 (1987-08-01), None
patent: 11-131263 (1999-05-01), None
patent: 2001-33940 (2003-06-01), None
patent: WO 00/67281 (2000-11-01), None
patent: WO 01/96955 (2001-12-01), None
PCT International Search Report from International Application No. PCT/US02/27869, Dated Dec. 23, 2002. (AMAT/6399PCT).
PCT Search Report for PCT/US03/11549, dated Feb. 19, 2004 (AMAT/6991.PCT).
Kwon, et al., “Loading Effect Parameters at Dry Etcher System and Their Analysis at Mask-to-Mask Loading and Within-Mask Loading” Proceedings of SPIE, vol. 4562 (2002) pp. 79-87.
Fujisawa, et al. “Evaluation of NLD Mask Dry Etching System” SPIE Symposium on Photomask and X-Ray Technology VI, Yokohama, Japan, Sep. (1999) vol. 3748 pp. 147-152.
Ruhl, et al., “Chrome Dry Etch Process Characterization Using Surface Nano Profiling” Proceedings of SPIE, vol. 4186 (2001) pp. 97-107.
Aoyama, et al. “Advanced Cr Dry Etching Process” SPIE Symposium on Photomask and X-Ray Technology VI, Yokohama, Japan, Sep. (1999) SPIE, vol. 3748 pp. 137-146.
PCT International Search Report dated Feb. 14, 2005 for PCT/US2004/008335. (AMAT/7681PCT).
PCT Written Opinion dated Feb. 14, 2005 for PCT/US2004/008335. (AMAT/7681PCT).
Mohri, et al., “Manufacturing of Half-Tone Phase Shift Masks: I. Blank” Proceedings of the SPIE—The International Society for Optical Engineering USA, vol. 2254, 1994, pp. 238-247.
Miyashita, et al., “Manufacturing of Half-Tone Phase Shift Masks: II. Writing and Process”, Proceedings of the SPIE—The International Society for Optical Engineering USA, vol. 2254, 1994, pp. 248-260. (AMAT/7681CPT).
PCT International Search Report for PCT/US 01/19282, dated May 31, 2002 (AMAT/4213.PC).
Brooks Cynthia B.
Buie Melisa J.
Stoehr Brigitte C.
Applied Materials Inc.
Moser Patterson & Sheridan LLP
Young Christopher G.
LandOfFree
Multi-step process for etching photomasks does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-step process for etching photomasks, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-step process for etching photomasks will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3520676