Multi-step method for etching strain gate recesses

Details Multi-step method for etching strain gate recesses Multi-step method for etching strain gate recesses

2007-12-04

2007-12-04

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S723000

Reexamination Certificate

active

11395921

ABSTRACT:
Methods of performing controllable lateral etches into the silicon layer using a plasma-enhanced etch-deposit-etch sequence are disclosed. The first etch step etches into the silicon layer. The deposition step passivates horizontal surfaces, including the bottom of the etched feature. The second etch step increases the lateral undercut, resulting in a low V:L ratio silicon layer etch.

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