Multi-step deposition and etch back gap fill process

Details Multi-step deposition and etch back gap fill process Multi-step deposition and etch back gap fill process

2005-03-15

2005-03-15

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S295000, C438S404000, C438S787000, C438S788000

Reexamination Certificate

active

06867086

ABSTRACT:
High density plasma chemical vapor deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots are provided. This deposition part of the process may involve the use of any suitable high density plasma chemical vapor deposition (HDP CVD) chemistry. The etch back part of the process involves an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality gap fill operations.

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