Multi-step chemical mechanical polishing of a gate area in a...

Details Multi-step chemical mechanical polishing of a gate area in a... Multi-step chemical mechanical polishing of a gate area in a...

2006-10-24

2006-10-24

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S279000, C438S157000

Reexamination Certificate

active

07125776

ABSTRACT:
A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial “rough” planarization and then a “fine” planarization. The slurry used for the finer planarization may include added material that tends to adhere to low areas of the gate material.

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