Multi-state memory cell

Details Multi-state memory cell Multi-state memory cell

2005-05-26

2009-06-16

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C438S182000, C438S195000, C257S315000, C257SE21179, C257SE21422, C257SE21680

Reexamination Certificate

active

07547599

ABSTRACT:
Floating-gate memory cells having a split floating gate facilitate decreased sensitivity to localized defects in the tunnel dielectric layer and/or the intergate dielectric layer. Such memory cells also permit storage of more than one bit per cell. Methods of the various embodiments facilitate fabrication of floating gate segments having dimensions less than the capabilities of the lithographic processed used to form the gate stacks.

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