Multi-state magnetoresistance random access cell with...

Details Multi-state magnetoresistance random access cell with... Multi-state magnetoresistance random access cell with...

2006-08-22

2006-08-22

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07095646

ABSTRACT:
A multi-state magnetoresistive random access memory device having a pinned ferromagnetic region with a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, an non-ferromagnetic spacer layer positioned on the pinned ferromagnetic region, and a free ferromagnetic region with an anisotropy designed to provide a free magnetic moment vector within the free ferromagnetic region with N stable positions, wherein N is a whole number greater than two, positioned on the non-ferromagnetic spacer layer. The number N of stable positions can he induced by a shape anisotropy of the free ferromagnetic region wherein each N stable position has a unique resistance value.

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Zheng et al, Multilevel Magnetoresistive Random Access Memory Written at Curie Point, Data Storage Institute, IEEE 2002.

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