Multi-silicide system in integrated circuit technology

Details Multi-silicide system in integrated circuit technology Multi-silicide system in integrated circuit technology

2005-09-15

2010-11-30

Fahmy, Wael M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C438S664000, C438S655000

Reexamination Certificate

active

07843015

ABSTRACT:
An integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over the gate dielectric. A sidewall spacer is formed around the gate and a source/drain junction is formed in the semiconductor substrate using the sidewall spacer. A bottom silicide metal is deposited on the source/drain junction and then a top silicide metal is deposited on the bottom silicide metal. The bottom and top silicide metals are formed into their silicides. A dielectric layer is deposited above the semiconductor substrate and a contact is formed in the dielectric layer to the top silicide.

REFERENCES:
patent: 5646070 (1997-07-01), Chung
patent: 6287967 (2001-09-01), Hsieh et al.
patent: 6468900 (2002-10-01), Bertrand et al.
patent: 6806157 (2004-10-01), Yang et al.
patent: 2003/0151069 (2003-08-01), Sugimae et al.

Affiliated with

Also associated with

Rating

Multi-silicide system in integrated circuit technology does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-silicide system in integrated circuit technology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-silicide system in integrated circuit technology will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4189904