Multi-run selective pattern and etch wafer process

Details Multi-run selective pattern and etch wafer process Multi-run selective pattern and etch wafer process

2006-06-13

2006-06-13

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C430S312000, C216S047000

Reexamination Certificate

active

07060626

ABSTRACT:
A method for forming a semiconductor wafer comprising of applying a first patterned resist to at least one first predetermined region of a wafer where said at least one first predetermined region of said wafer are protected by said first patterned resist and a first remaining portion of said wafer is not protected by said first patterned resist; etching said first remaining portion of said wafer not protected by said first pattern resist; stripping the first pattern resist from said wafer; applying a second patterned resist to at least one second pre-determined region of said wafer where said at least one second predetermined region of said wafer are protected by a second patterned resist and a second remaining portion is not protected by said second patterned resist; etching said second remaining portion not protected by said second patterned resist; and stripping said second patterned resist from said wafer.

REFERENCES:
patent: 4155627 (1979-05-01), Gale et al.
patent: 5629772 (1997-05-01), Ausschnitt
patent: 5790254 (1998-08-01), Ausschnitt
patent: 5980766 (1999-11-01), Flamm et al.
patent: 5994175 (1999-11-01), Gardner et al.
patent: 6090717 (2000-07-01), Powell et al.
patent: 6191046 (2001-02-01), Singh et al.
patent: 6232134 (2001-05-01), Farber et al.
patent: 6245581 (2001-06-01), Bonser et al.
patent: 6716763 (2004-04-01), Li et al.
patent: 6846618 (2005-01-01), Hsu et al.

Affiliated with

Also associated with

Rating

Multi-run selective pattern and etch wafer process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-run selective pattern and etch wafer process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-run selective pattern and etch wafer process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3643857