Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1981-06-22
1983-10-04
Saba, W. G.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
148174, 148175, 156613, 252 623GA, 252951, 427 87, H01L 21205, H01L 21223
Patent
active
044076940
ABSTRACT:
Silicon doping of GaAs epitaxial layers grown using the AsCl.sub.3 /H.sub.2 /GaAs:Ga CVD system is accomplished using AsCl.sub.3 :SiCl.sub.4 liquid doping solutions. These solutions can be readily prepared with reproducible compositions and provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H.sub.2 flow rate and by varying the temperature of the doping solution. Doping levels may range from about 5.times.10.sup.15 to 5.times.10.sup.19 cm.sup.-3 by adjusting the mole fraction of SiCl.sub.4 in the doping solution and the H.sub.2 flow rate to change the mole fraction of P.sub.HCl. The epitaxial layers doped using this technique have excellent room temperature and liquid nitrogen mobilities for electron concentrations between 1.times.10.sup.16 cm.sup.-3 and 8.times.10.sup.18 cm.sup.-3. This doping method is particularly useful for the growth of GaAs epitaxial layers for FET devices.
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Shaw et al., "Gallium Arsenide Epitaxial Technology", 1966 Symp. on GaAs, Paper No. 2, pp. 10-15.
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Eu Victor K.
Feng Milton
Whelan James M.
Zielinski Timothy T.
Bethurum W. J.
Collins David W.
Hughes Aircraft Company
Karambelas A. W.
Saba W. G.
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