Multi-port phase change random access memory cell and...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000, C365S063000

Reexamination Certificate

active

07668006

ABSTRACT:
A multi-port phase change random access memory (PRAM) cell, includes a PRAM element including a phase change material, a writing controller configured to operate in correspondence with a writing word line, the writing controller connecting a writing bit line to the PRAM element, and a reading controller configured to operate in correspondence with a reading word line, the reading controller connecting the PRAM element to a reading bit line.

REFERENCES:
patent: 5204841 (1993-04-01), Chappell et al.
patent: 6834024 (2004-12-01), Frydel
patent: 7301791 (2007-11-01), Atwood et al.
patent: 7411813 (2008-08-01), Maki
patent: 7474555 (2009-01-01), Nirschl et al.
patent: 2006/0077737 (2006-04-01), Ooishi
patent: 07-052586 (1995-06-01), None
patent: 2006-031795 (2006-02-01), None
patent: 10-2005-0118332 (2005-12-01), None

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