Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2007-09-25
2010-02-23
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C365S063000
Reexamination Certificate
active
07668006
ABSTRACT:
A multi-port phase change random access memory (PRAM) cell, includes a PRAM element including a phase change material, a writing controller configured to operate in correspondence with a writing word line, the writing controller connecting a writing bit line to the PRAM element, and a reading controller configured to operate in correspondence with a reading word line, the reading controller connecting the PRAM element to a reading bit line.
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Kim Du-eung
Lee Chang-soo
Lee Kwang-jin
Wang Qi
Lam David
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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