Static information storage and retrieval – Read/write circuit – Simultaneous operations
Patent
1996-11-18
1998-02-10
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
Simultaneous operations
36518905, 36523005, G11C 1300
Patent
active
057176388
ABSTRACT:
A static RAM memory cell with a plurality of input/output ports is disclosed including: a latch circuit which maintains complementary voltages at first and second nodes; a first output circuit which generates an output signal having an state inverted from the voltage of the first node; a second output circuit which generates an output signal having an state inverted from the voltage of the second node; a first transfer circuit for transferring the output signals from the first and second output circuits to a first sense amplifier in response to a first read control signal; a second transfer circuit for transferring the output signals from the first and second output circuits to a second sense amplifier in response to a second read control signal; a third transfer circuit for transferring an external voltage to the first node in response to a write control signal; and a reset circuit for resetting the latch circuit to initialize data in response to a reset signal.
REFERENCES:
patent: 5493536 (1996-02-01), Aoki
Fears Terrell W.
Samsung Electronics Co,. Ltd.
LandOfFree
Multi-port memory cells and memory with parallel data initializa does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-port memory cells and memory with parallel data initializa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-port memory cells and memory with parallel data initializa will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2082952