Multi-phase wordline erasing for flash memory

Details Multi-phase wordline erasing for flash memory Multi-phase wordline erasing for flash memory

2007-05-07

2009-12-01

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240

Reexamination Certificate

active

07626869

ABSTRACT:
Erasing wordlines at the same time can cause undesirable results because some wordlines are affected by electromagnetic waves of other wordlines. However, other wordlines are not affected because they are next to contacts. Therefore, it can be beneficial to erase wordlines in a multi-phase sequence that allows for erasing wordlines without an impact from other wordlines.

REFERENCES:
patent: 6295227 (2001-09-01), Sakui et al.
patent: 6301150 (2001-10-01), Kanamitsu et al.
patent: 6728146 (2004-04-01), Li et al.
patent: 6954765 (2005-10-01), Spiegel
patent: 7155357 (2006-12-01), Hollmer
patent: 2004/0073582 (2004-04-01), Spiegel
patent: 2005/0154818 (2005-07-01), Chen
patent: 2007/0101184 (2007-05-01), Norman et al.

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