Multi-operational mode transistor with multiple-channel...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S309000, C438S166000, C438S268000, C257SE21430

Reexamination Certificate

active

07544572

ABSTRACT:
A multiple operating mode transistor is provided in which multiple channels having different respective operational characteristics are employed. Multiple channels have threshold voltages that are independently adjustable. The independent adjustment of the threshold voltage includes providing at least one of different respective doping concentrations in the different channels, different respective gate dielectric thicknesses for the different gate dielectrics separating the channels, and different respective silicon channel thicknesses for the different channels.

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patent: 2005/0112851 (2005-05-01), Lee et al.
patent: 1450394 (2004-08-01), None
patent: 2856521 (2004-12-01), None
patent: WO 2005/004241 (2005-01-01), None
PCT International Search Report for International Application No. PCT/US2006/044308 mailed Mar. 1, 2007.
International Preliminary Report on Patentability PCTUS2006/044308.

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