Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-30
2009-06-09
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S309000, C438S166000, C438S268000, C257SE21430
Reexamination Certificate
active
07544572
ABSTRACT:
A multiple operating mode transistor is provided in which multiple channels having different respective operational characteristics are employed. Multiple channels have threshold voltages that are independently adjustable. The independent adjustment of the threshold voltage includes providing at least one of different respective doping concentrations in the different channels, different respective gate dielectric thicknesses for the different gate dielectrics separating the channels, and different respective silicon channel thicknesses for the different channels.
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PCT International Search Report for International Application No. PCT/US2006/044308 mailed Mar. 1, 2007.
International Preliminary Report on Patentability PCTUS2006/044308.
Pan James
Pellerin John
Advanced Micro Devices , Inc.
Lee Kyoung
McDermott Will & Emery LLP
Richards N Drew
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