Multi-level semiconductor device and method of fabricating...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C257SE21661

Reexamination Certificate

active

07947540

ABSTRACT:
A multi-level semiconductor device includes a first transistor on a semiconductor substrate, the first transistor including a first source/drain region, a semiconductor layer on the semiconductor substrate, a second transistor on the semiconductor layer, the second transistor including a second source/drain region in a first portion of the semiconductor layer, and a contact pattern extending from the first source/drain region and contacting a second portion of the semiconductor layer, wherein the second portion of the semiconductor layer has an impurity concentration that is greater than that of the second source/drain region.

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