Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-05-24
2011-05-24
Bryant, Kiesha R (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21661
Reexamination Certificate
active
07947540
ABSTRACT:
A multi-level semiconductor device includes a first transistor on a semiconductor substrate, the first transistor including a first source/drain region, a semiconductor layer on the semiconductor substrate, a second transistor on the semiconductor layer, the second transistor including a second source/drain region in a first portion of the semiconductor layer, and a contact pattern extending from the first source/drain region and contacting a second portion of the semiconductor layer, wherein the second portion of the semiconductor layer has an impurity concentration that is greater than that of the second source/drain region.
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Anya Igwe U
Bryant Kiesha R
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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