Multi-level phase change memory device and related methods

Details Multi-level phase change memory device and related methods Multi-level phase change memory device and related methods

2008-07-07

2010-11-09

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S210100

Reexamination Certificate

active

07830705

ABSTRACT:
Provided are a phase change memory device and a reading method thereof. An example embodiment of a phase change memory device may include main cells programmed to have any one of a plurality of resistance states respectively corresponding to multi-bit data, reference cells programmed to have at least two respectively different resistance states among the resistance states each time the main cells are programmed, and a reference voltage generation circuit sensing the reference cells to generate reference voltages for identifying each of the resistance states.

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patent: 7463699 (2008-12-01), Zhang et al.
patent: 2007/0159870 (2007-07-01), Tanizaki et al.
patent: 2004-110867 (2004-04-01), None
patent: 1020050116569 (2005-12-01), None
patent: 1020060086132 (2006-07-01), None

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