Multi-level cell memory device and method thereof

Details Multi-level cell memory device and method thereof Multi-level cell memory device and method thereof

2011-06-14

2011-06-14

Chase, Shelly A (Department: 2112)

Error detection/correction and fault detection/recovery

Pulse or data error handling

Digital data error correction

Reexamination Certificate

active

07962831

ABSTRACT:
A Multi-Level Cell (MLC) memory device and method thereof are provided. The example MLC memory device may be configured to perform data operations, and may include an MLC memory cell, a first coding device performing a first coding function, the first coding function being one of an encoding function and a decoding function, a second coding device performing a second coding function, the second coding function being one of an encoding function and a decoding function and a signal module configured to perform at least one of instructing the MLC memory cell to store data output by the second coding device if the first and second coding functions are encoding functions, and generating a demapped bit stream based on data retrieved from the MLC memory cell if the first and second coding functions are decoding functions.

REFERENCES:
patent: 5515317 (1996-05-01), Wells et al.
patent: 6097637 (2000-08-01), Bauer et al.
patent: 6279133 (2001-08-01), Vafai et al.
patent: 7096406 (2006-08-01), Kanazawa et al.
patent: 7366462 (2008-04-01), Murali et al.
patent: 7388781 (2008-06-01), Litsyn et al.
patent: 7409623 (2008-08-01), Baker et al.
International Search Report dated Sep. 28, 2007, for International Application No. PCT/KR2007/003001.

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