Multi-layered, vertically stacked non-volatile memory device...

Details Multi-layered, vertically stacked non-volatile memory device... Multi-layered, vertically stacked non-volatile memory device...

2011-05-24

2011-05-24

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21652, C438S259000

Reexamination Certificate

active

07948024

ABSTRACT:
A nonvolatile memory device is provided that includes; a first semiconductor layer extending in a first direction, a second semiconductor layer extending in parallel with and separated from the first semiconductor layer, an isolation layer between the first semiconductor layer and second semiconductor layer, a first control gate electrode between the first semiconductor layer and the isolation layer, a second control gate electrode between the second semiconductor layer and the isolation layer, wherein the second control gate electrode and first control gate electrode are respectively disposed at opposite sides of the isolation layer, a first charge storing layer between the first control gate electrode and the first semiconductor layer, and a second charge storing layer between the second control gate electrode and the second semiconductor layer.

REFERENCES:
patent: 6486027 (2002-11-01), Noble et al.
patent: 6677204 (2004-01-01), Cleeves et al.
patent: 2008/0242034 (2008-10-01), Mokhlesi et al.
patent: 2008172164 (2008-07-01), None
patent: 1020060089547 (2006-08-01), None

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