Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Reexamination Certificate
2006-01-17
2006-01-17
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Containing germanium, ge
C257S190000, C257S191000, C257S192000
Reexamination Certificate
active
06987310
ABSTRACT:
A multi-layered structure of a semiconductor device includes a substrate, and a heteroepitaxial layer having a low dislocation defect density on the substrate. The heteroepitaxial layer consists of a main epitaxial layer and at least one intermediate epitaxial layer sandwished in the main epitaxial layer. At their interface, the heteroepitaxial layer, i.e., the bottom portion of the main epitaxial layer, and the substrate have different lattice constants. Also, the intermediate epitaxial layer has a different lattice constant from that of the portions of the main epitaxial layer contiguous to the intermediate epitaxial layer. The intermediate epitaxial layer also has a thickness smaller than the net thickness of the main epitaxial layer such that the intermediate epitaxial layer absorbs the strain in the heteroepitaxial layer. Thus, it is possible to obtain a multi-layered structure comprising an epitaxial layer that is relatively thin and has a low dislocation defect density.
REFERENCES:
patent: 5659187 (1997-08-01), Legoues et al.
patent: 6749686 (2004-06-01), Ami et al.
patent: 6822302 (2004-11-01), Higuchi et al.
Lee Ho
Lee Seung-Hwan
Park Moon-Han
Rhee Hwa-Sung
Yoo Jae-Yoon
Nguyen Cuong
Samsung Electronic Co. Ltd.
Volentine Francos & Whitt PLLC
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