Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
1999-09-23
2001-12-11
Nguyen, Nam (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192120, C204S298110, C204S298160, C204S298260, C204S298250, C204S298280, C204S298290
Reexamination Certificate
active
06328858
ABSTRACT:
FIELD OF THE INVENTION
This invention relates in general to a semiconductor processing apparatus. In particular, this invention relates to a sputter deposition apparatus and to methods of operating a sputter deposition apparatus.
BACKGROUND INFORMATION
Most microelectronic devices are fabricated by depositing thin metal and dielectric films onto substrates such as silicon, gallium arsenide, and glass. Thin metals and dielectrics are deposited in a vacuum chamber by numerous techniques known in the art such as sputtering, evaporation, and Chemical Vapor Deposition (CVD). Sputtering is a versatile deposition technique because it can be used to deposit a wide variety of materials at relatively high deposition rates. Sputtering is particularly useful for depositing multiple layers of materials.
Sputtering systems typically bias a target comprising the material to be sputtered at a relatively high voltage, typically about −500 volts, in a vacuum chamber filled with an inert gas such as argon, at pressures ranging from 0.1 mtorr to 100 mtorr. The bias potential induces a breakdown of the gas and the formation of a plasma glow discharge. The ions in the plasma are accelerated by the negative potential into the target thereby producing secondary atomic emission, which sputters material on a substrate placed in the path of the sputtered ions. Magnetic fields are typically used to confine the plasma in order to increase the sputtering rate.
It is sometimes desirable to deposit multiple layers of different material on substrates without removing the substrates from the process chamber. However, most prior art sputtering systems are designed to deposit one material, which may be a single metal or dielectric or a combination of several metals or dielectrics. Thus, if multiple layers of different materials have to be deposited on substrates, the sputtering systems usually need to be reconfigured and the substrates have to be cycled from atmosphere to vacuum. Exposing the substrates to atmospheric pressure between depositions may result in the formation of an undesirable interface layer.
It is desirable to process multiple substrates simultaneously in order to increase process throughput and thus reduce the manufacturing costs of the microelectronic devices. Modern semiconductor processing tools, such as cluster tools, process multiple batches of substrates simultaneously. Cluster tools comprise a plurality of process chambers that are clustered around a central platform. A transport mechanism or robot moves the substrates between the various process chambers.
Typically, each process chamber attached to the cluster tool performs a single task and can be operated independent of the other process chambers. For example, the individual process chambers may clean substrates before processing, etch substrates or a film deposited on substrates, or deposit metal or dielectric films on substrates. Typically, the process chambers are configured to deposit only one metal or dielectric film. Consequently, if the process requires multiple layers of metals or dielectric films, the multiple layers are sequentially deposited in different process chambers. State-of-the-art cluster tools typically have between four and eight process chambers. Therefore, cluster tools have a limited capability to deposit multi-layer film coatings.
Some multi-layer films need to be deposited sequentially in one process chamber. Moving the substrates from one process chamber to another process chamber usually changes the pressure and temperature of the substrates. These pressure and temperature changes may result in the formation of an undesirable interface layer between the films.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a sputter deposition tool or module for a cluster tool that deposits multiple layers of metal or dielectric films on substrates in a single deposition chamber. It is another object of the present invention to provide a method of chromium/copper phase-in deposition for the sputter deposition tool and cluster tool module of the present invention.
It is a principle discovery of the present invention that a sputter deposition system or cluster tool module can be constructed with a plurality of magnetrons mounted on a rotatable member that defines an aperture. It is another principle discovery of the present invention that chromium/copper phase-in deposition can be achieved using the sputter deposition system or cluster tool module of the present invention.
Accordingly, the present invention features a multi-layer sputter deposition system that includes a plurality of magnetrons mounted on a rotatable member that defines an aperture. Sputtering targets are positioned proximate to each of the plurality of magnetrons. At least one of the sputtering targets may comprise at least two materials. The rotatable member may include a ferrofluidic conduit that receives at least one of the electrical wires and cooling fluid. The rotatable member may also be rotatably supported by a bearing. In one embodiment, the aperture is maintained at substantially atmospheric pressure. A predetermined one of the plurality of magnetrons is positionable proximate to a substrate in the sputter deposition chamber. At least one shield may be included to prevent sputtered material from contaminating the magnetrons.
The multi-layer sputter deposition system also includes a transport mechanism that transports the substrate in the path of the sputtered ions in a first and a second direction. The second direction is substantially opposite to the first direction. In one embodiment, a processor is in electrical communication with the rotatable member and instructs the rotatable member to position a predetermined one of the plurality of magnetrons proximate to a substrate. The processor may also be in electrical communication with the transport mechanism and may instruct the transport mechanism to transport the substrate proximate to a predetermined one of the plurality of magnetrons.
The present invention also features an apparatus for simultaneously processing substrates. The apparatus includes a plurality of chambers positioned around a central aperture. A substrate transport mechanism positioned in the aperture moves at least one substrate into and out of each of the chambers. The apparatus includes a substrate storage chamber positioned around the central aperture. The storage chamber stores at least one substrate prior to processing and at least one substrate after processing. The apparatus also includes at least one process chamber positioned around the central aperture. The process chamber may be any process chamber known in the art. For example, the process chamber may be a cleaning chamber, an etching chamber, or a deposition chamber.
The apparatus also includes a multi-layer sputter deposition chamber that includes a plurality of magnetrons mounted on a rotatable member. A predetermined one of the plurality of magnetrons is positionable proximate to a substrate in the second process chamber. A transport mechanism transports the substrates proximate to the predetermined one of the plurality of magnetrons in a first and a second direction.
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Felsenthal David
Lee Chunghsin
Sferlazzo Piero
NEXX Systems Packaging, LLC
Nguyen Nam
Testa Hurwitz & Thibeault LLP
VerSteeg Steven H
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