Multi-layer magnetic memory cells with improved switching charac

Details Multi-layer magnetic memory cells with improved switching charac Multi-layer magnetic memory cells with improved switching charac

1996-09-25

1998-06-16

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365173, G11C 1115

Patent

active

057681830

ABSTRACT:
A plurality of layers of magnetic material are stacked in parallel, overlying relationship and separated by layers of non-magnetic material so as to form a multi-layer magnetic memory cell. The width of the cell is less than a width of magnetic domain walls within the magnetic layers so that magnetic vectors in the magnetic layers point along a length of the magnetic layers, and the ratio of the length to the width of the magnetic memory cell is in a range of 1.5 to 10. The magnetic layers are antiferromagnetically coupled when the ratio is less than 4 and ferromagnetically coupled when the ratio is greater than 4.

REFERENCES:
patent: 3962690 (1976-06-01), Koenig et al.
patent: 5025416 (1991-06-01), Prinz
patent: 5083112 (1992-01-01), Piotrowski et al.
patent: 5347485 (1994-09-01), Taguchi et al.
patent: 5659499 (1997-08-01), Chen et al.

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