Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-06
2007-02-06
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S634000, C438S637000, C438S737000, C438S738000, C438S740000, C438S743000, C438S744000, C438S761000, C438S763000, C438S786000, C438S787000, C438S791000, C438S902000, C438S945000, C438S950000, C438S952000, C438S958000, C257SE21017
Reexamination Certificate
active
09750734
ABSTRACT:
A method including introducing a dielectric layer over a substrate between an interconnection line and the substrate, the dielectric layer comprising a plurality of alternating material layers; and patterning an interconnection to the substrate. An apparatus comprising a substrate comprising a plurality of devices formed thereon; and an interlayer dielectric layer comprising a base layer and a cap layer, the cap layer comprising a plurality of alternating material layers overlying the substrate.
REFERENCES:
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5565384 (1996-10-01), Havemann
patent: 5639687 (1997-06-01), Roman et al.
patent: 5792703 (1998-08-01), Bronner et al.
patent: 5840624 (1998-11-01), Jang et al.
patent: 6037276 (2000-03-01), Lin et al.
patent: 6042999 (2000-03-01), Lin et al.
patent: 6060380 (2000-05-01), Subramanian et al.
patent: 6072237 (2000-06-01), Jang et al.
patent: 6127089 (2000-10-01), Subramanian et al.
patent: 6174810 (2001-01-01), Islam et al.
patent: 6214721 (2001-04-01), Bendik et al.
patent: 6222241 (2001-04-01), Plat
patent: 6350679 (2002-02-01), McDaniel et al.
patent: 6350700 (2002-02-01), Schinella et al.
patent: 6362091 (2002-03-01), Andideh et al.
patent: 6383918 (2002-05-01), Ku et al.
patent: 6383950 (2002-05-01), Pangrle et al.
patent: 6399480 (2002-06-01), En et al.
patent: 6420280 (2002-07-01), Plat
patent: 6475925 (2002-11-01), Braeckelmann et al.
patent: 6562544 (2003-05-01), Cheung et al.
patent: 6635583 (2003-10-01), Bencher et al.
patent: 6664177 (2003-12-01), Lin et al.
patent: 6682996 (2004-01-01), Blosse
patent: 6869879 (2005-03-01), Ryan
patent: 2001/0010976 (2001-08-01), Plat
patent: 2001/0012689 (2001-08-01), Okoroanyanwu et al.
Elamrawi Khaled A.
King Sean W.
Natarajan Sanjay S.
Ahmadi Mohsen
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Lebentritt Michael
LandOfFree
Multi-layer film stack for extinction of substrate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-layer film stack for extinction of substrate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-layer film stack for extinction of substrate... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3817545