Multi-layer dielectric containing diffusion barrier material

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers

Reexamination Certificate

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C438S528000, C438S287000

Reexamination Certificate

active

07144825

ABSTRACT:
A method for forming a dielectric is disclosed. The method comprises forming a first dielectric layer over semiconductor material. A diffusion barrier material is introduced into the first dielectric layer. Lastly, a second dielectric layer is formed over the first dielectric layer after the introducing.

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