Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-21
2005-06-21
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S199000
Reexamination Certificate
active
06909147
ABSTRACT:
The present invention provides a FinFET device that has a first fin and a second fin. Each fin has a channel region and source and drain regions that extend from the channel region. The fins have different heights. The invention has a gate conductor positioned adjacent the fins. The gate conductor runs perpendicular to the fins and crosses the channel region of each of the first fin and second fin. The fins are parallel to one another. The ratio of the height of the first fin to the height of the second fin comprises a ratio of one to 2/3. The ratio is used to tune the performance of the transistor and determines the total channel width of the transistor.
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Aller Ingo
Keinert Joachim
Ludwig Thomas
Nowak Edward J.
Rainey BethAnn
Chadurjian, Esq. Mark F.
Dolan Jennifer M.
International Business Machines - Corporation
Jr. Carl Whitehead
McGinn & Gibb PLLC
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