Multi-gate semiconductor device and method for forming the same

Details Multi-gate semiconductor device and method for forming the same Multi-gate semiconductor device and method for forming the same

2011-03-22

2011-03-22

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S202000, C438S276000, C438S279000, C438S283000

Reexamination Certificate

active

07910441

ABSTRACT:
A semiconductor device includes a substrate (20), a source region (58) formed over the substrate, a drain region (62) formed over the substrate, a first gate electrode (36) over the substrate adjacent to the source region and between the source and drain regions, and a second gate electrode (38) over the substrate adjacent to the drain region and between the source and drain regions.

REFERENCES:
patent: 2001/0043449 (2001-11-01), Okushima
patent: 2004/0256692 (2004-12-01), Kunz et al.
patent: 2006/0223258 (2006-10-01), Okushima
patent: 2008/0002463 (2008-01-01), Sugizaki

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