Multi-function serial I/O circuit

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

Reexamination Certificate

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Details

C365S158000, C365S221000

Reexamination Certificate

active

06587384

ABSTRACT:

BACKGROUND
Magnetic Random Access Memory (“MRAM”) is a type of non-volatile memory that is being considered for long-term data storage. Data can be accessed much, much faster from MRAM devices than conventional long-term storage devices such as hard drives. In addition, the MRAM devices are more compact and consume less power than hard drives and other conventional long-term storage devices.
Certain MRAM devices perform destructive read operations in which values of bits are read, changed and then restored. The destructive read operations increase reliability of reading the values. However, the destructive read operations require additional circuitry for performing functions such as write-back.
Providing separate circuits for performing the write-backs is not desirable.
SUMMARY
According to one aspect of the present invention, an input/output circuit includes a first register having a first input and a first output; a second register having a second input; and a third register having a third input. The first output is coupled to the second input and the third input. The third register can store data for write-backs.
Other aspects and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.


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patent: 6269028 (2001-07-01), Togami
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