Multi-dielectric films for semiconductor devices and methods...

Details Multi-dielectric films for semiconductor devices and methods... Multi-dielectric films for semiconductor devices and methods...

2011-05-10

2011-05-10

Sandvik, Benjamin P (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S297000, C257S298000, C257S299000, C257S300000, C257S301000, C257S302000, C257S303000, C257S310000, C257SE27016, C257SE27024, C257SE27034, C257SE27048, C257SE27092, C257SE21008, C257SE21009, C257SE21010, C257SE21021, C438S239000, C438S240000, C438S250000, C438S253000, C438S386000, C438S387000

Reexamination Certificate

active

07939872

ABSTRACT:
A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.

REFERENCES:
patent: 2004/0072401 (2004-04-01), Iizuka et al.
patent: 2004/0248361 (2004-12-01), Oh et al.
patent: 2006/0102983 (2006-05-01), Iijima
patent: 2006/0141695 (2006-06-01), Choi et al.
patent: 2007/0045693 (2007-03-01), Manning et al.
patent: 2007/0102742 (2007-05-01), Kil et al.
patent: 2004-134579 (2004-04-01), None
patent: 1020060033500 (2006-04-01), None
patent: 1020060113249 (2006-11-01), None

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