Multi-component strain-inducing semiconductor regions

Details Multi-component strain-inducing semiconductor regions Multi-component strain-inducing semiconductor regions

2011-05-17

2011-05-17

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21619, C257SE21634

Reexamination Certificate

active

07943469

ABSTRACT:
A multi-component strain-inducing semiconductor region is described. In an embodiment, formation of such a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In one embodiment, the multi-component strain-inducing material region comprises a first portion and a second portion which are separated by an interface. In a specific embodiment, the concentration of charge-carrier dopant impurity atoms of the two portions are different from one another at the interface.

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