Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2006-08-15
2006-08-15
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S777000, C257S723000, C257S787000
Reexamination Certificate
active
07091623
ABSTRACT:
A multi-chip semiconductor package and a fabrication method thereof are provided. A substrate having an upper surface and a lower surface is prepared. At least a first chip is mounted on the upper surface of the substrate. A non-conductive material is applied over predetermined area on the first chip and the upper surface of the substrate. At least a second chip is mounted on the non-conductive material, and formed with at least a suspending portion free of interference in position with the first chip, wherein the non-conductive material is dimensioned in surface area at least corresponding to the second chip, so as to allow the suspending portion to be supported on the non-conductive material. With the second chip being completely supported on the non-conductive material without causing a conventional chip-crack problem, structural intactness and reliability can be effectively assured for fabricated package products.
REFERENCES:
patent: 6353263 (2002-03-01), Dotta et al.
patent: 6521881 (2003-02-01), Tu et al.
Chen Kuen-Huang
Hsu Yu-Ming
Lin Chin-Hsing
Su Wen-Sheng
Tsai Shiann-Tsong
Clark Jasmine
Fulbright & Jaworski L.L.P.
UltraTera Corporation
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