Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2006-12-19
2006-12-19
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S778000, C257S779000, C257SE21503, C257SE21511, C438S107000, C438S108000, C438S613000, C438S612000
Reexamination Certificate
active
07151317
ABSTRACT:
A multi-chip package structure comprising a first chip, a patterned lamination layer, a plurality of first bumps, a second chip and second bumps is provided. The first chip has a first active surface. The patterned lamination layer is disposed on a portion area of the first active surface. The first chip has a plurality of first bonding pads disposed on the first active surface exposed by the patterned lamination layer and the patterned lamination layer has a plurality of second bonding pads disposed thereon. The second chip has a second active surface and the first bumps are disposed on the second active surface. The second chip is electrically connected to the first bonding pads through the first bumps. The second bumps are disposed on the second bonding pads. Moreover, the multi-chip package structure further comprises a component disposed on the first chip and electrically connects to the first bonding pads.
REFERENCES:
patent: 6906415 (2005-06-01), Jiang et al.
patent: 6921968 (2005-07-01), Chung
patent: 2004/0164390 (2004-08-01), Wang
Chao Shin-Hua
Lo Jian-Wen
Advanced Semiconductor Engineering Inc.
Jiang Chyun IP Office
Kebede Brook
Kim Su C.
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