Multi-chip package

Details Multi-chip package Multi-chip package

1999-12-21

2000-09-19

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

257724, 257777, 257778, 257686, H01L 2348

Patent

active

061216828

ABSTRACT:
Disclosed is a multi-chip package. According to the present invention, a first semiconductor chip includes a first face in which a bonding pad disposed, and a second face opposite to the first face. A first insulating layer is coated over the first face of the first semiconductor chip so as to expose the bonding pad. A metal pattern is deposited on the first insulating layer and one end of the metal pattern is connected to the exposed bonding pad. A second insulating layer having a via hole exposing the metal pattern and a ball land, is coated over the first face of the first semiconductor chip. A second semiconductor chip includes a first face in which a bonding pad is disposed and opposite to the first face of the first semiconductor chip, and a second face opposite to the first face of the second semiconductor chip. The second semiconductor chip is opposed from the first face of the first semiconductor chip by a selected distance. A third insulating layer is coated on the first face of the second semiconduuctor chip so as to expose the bonding pad of the second semiconductor chip. A conductive bump is formed at the bonding pad of the second semiconductor chip. The conductive bump is inserted into the via hole, thereby electrically connecting the first and the second semiconductor chips with a medium of the metal pattern. A solder ball is mounted in the ball land, and the solder ball is formed with a size that is large enough to be protruded from the second face of the second semiconductor layer.

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